Damascene Process and Chemical Mechanical Planarization )e
نویسندگان
چکیده
The constant demand to scale down transistors and improve device performance has led to material as well as process changes in the formation of IC interconnect. Traditionally, aluminum has been used to form the IC interconnects. The process involved subtractive etching of blanket aluminum as defined by the patterned photo resist. However, the scaling and performance demands have led to transition from Aluminum to Copper interconnects. The primary motivation behind the introduction of copper for forming interconnects is the advantages that copper offers over Aluminum. The table 1 below gives a comparison between Aluminum and Copper properties.
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